Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In/sub 0.3/Ga/sub 0.7/N/GaN short-period superlattice tunneling contact layer
- 1 October 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 22 (10) , 460-462
- https://doi.org/10.1109/55.954911
Abstract
InGaN/GaN multiple-quantum-well light-emitting diode (LED) structures including a Si-doped In/sub 0.23/Ga/sub 0.77/N/GaN short-period superlattice (SPS) tunneling contact were grown by metalorganic vapor phase epitaxy. In/sub 0.23/Ga/sub 0.77/N/GaN(n/sup +/)-GaN(p) tunneling junction, the low-resistivity n/sup +/-In/sub 0.3/Ga/sub 0.77/N/GaN SPS instead of high-resistivity p-type GaN as a top contact layer, allows the reverse-biased tunnel junction to form an "ohmic" contact. In this structure, the sheet electron concentration of Si-doped In/sub 0.23/Ga/sub 0.77/N/GaN SPS is around 1/spl times/10/sup 14//cm/sup 2/, leading to an averaged electron concentration of around 1/spl times/10/sup 20//cm/sup 3/. This high-conductivity SPS would lead to a low-resistivity ohmic contact (Au/Ni/SPS) of LED. Experimental results indicate that the LEDs can achieve a lower operation voltage of around 2.95 V, i.e., smaller than conventional devices which have an operation voltage of about 3.8 V.Keywords
This publication has 21 references indexed in Scilit:
- Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctionsApplied Physics Letters, 2001
- Room-temperature operation at 333 nm of Al0.03Ga0.97N/Al0.25Ga0.75N quantum-well light-emitting diodes with Mg-doped superlattice layersApplied Physics Letters, 2000
- Luminescence of an InGaN/GaN multiple quantum well light-emitting diodeSolid-State Electronics, 2000
- Blue InGaN-based laser diodes with an emission wavelength of 450 nmApplied Physics Letters, 2000
- Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaNApplied Physics Letters, 1998
- Activation energies of Si donors in GaNApplied Physics Letters, 1996
- Doping of gallium nitride using disilaneJournal of Electronic Materials, 1995
- Highly reliable operation of indium tin oxide AlGaInPorange light-emitting diodesElectronics Letters, 1994
- High current density carbon-doped strained-layer GaAs (p+)-InGaAs(n+)-GaAs(n+) p-n tunnel diodesApplied Physics Letters, 1993
- Indium tin oxide as transparent electrode material for ZnSe-based blue quantum well light emittersApplied Physics Letters, 1992