Highly reliable operation of indium tin oxide AlGaInPorange light-emitting diodes
- 13 October 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (21) , 1793-1794
- https://doi.org/10.1049/el:19941228
Abstract
Indium-tin oxide (ITO) transparent conducting films with a low resistivity of 2–3 × 10-4 Ω·cm have been introduced as a window layer in (Al0.7Ga0.7)0.5In0.5P/(Al0.1Ga0.9)0.5In0.5P double-heterostructure orange light-emitting diodes to obtain a uniform spatial distribution of the emission light, a good device performance and high reliability. An output power of 450 µW at 20 mA corresponding to an external quantum efficiency of 1.1% for the 620 nm emission can be achieved.Keywords
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