New double-heterostructure indium-tin oxide/InGaAsP/AlGaAs surface light-emitting diodes at 650-nm range
- 1 September 1989
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (5) , 2181-2185
- https://doi.org/10.1063/1.344315
Abstract
New double‐heterostructure indium‐tin oxide/InGaAsP/AlGaAs surface light‐emitting diodes have been fabricated by liquid‐phase epitaxy and rf sputtering methods. In this structure, indium‐tin oxide acts as both an n‐type cladding layer and a transparent conductor. Peak wavelength and full width at half maximum of the surface emitting spectrum were 653 and 17 nm, respectively. An output power of 1 mW was achieved at a current level of 66 mA, corresponding to a current density of 22 A/cm2 under pulsed operation for the diode with a 400 μm×450 μm emitting area. The optical emission was distributed over the entire emitting area.This publication has 28 references indexed in Scilit:
- n-ITO/p-InGaAsP Solar Cell Fabricated on GaAs SubstrateJapanese Journal of Applied Physics, 1987
- Fabrication and lasing characteristics of 0.67 µm GaInAsP/AlGaAs visible lasers prepared by liquid phase epitaxy onIEEE Journal of Quantum Electronics, 1987
- 661.7 nm room-temperature CW operation of AlGaInP double-heterostructure lasers with aluminium-containing quaternary active layerElectronics Letters, 1985
- Low-threshold InGaAsP/InGaP lasers at 810 nm grown on GaAs substrate by LPEElectronics Letters, 1984
- GaAs0.6P0.4LED's with efficient transparent contacts for spatially uniform light emissionIEEE Transactions on Electron Devices, 1983
- Properties of Sn-Doped Indium Oxide Prepared by High Rate and Low Temperature RF SputteringJapanese Journal of Applied Physics, 1978
- Observation of Internal Interference in Emission Spectra of GaAs0.9P0.1LED's with Thin N-Layer as an Optical WindowJapanese Journal of Applied Physics, 1977
- Efficient sprayed In2O3 : Sn n-type silicon heterojunction solar cellApplied Physics Letters, 1977
- Transparent conductive Sn‐doped indium oxide coatings deposited by reactive sputtering with a post cathodeJournal of Vacuum Science and Technology, 1976
- Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniquesJournal of Crystal Growth, 1974