Unstable mixing region in wurtzite In1−−Ga Al N
- 1 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 189-190, 19-23
- https://doi.org/10.1016/s0022-0248(98)00148-1
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Calculation of unstable mixing region in wurtzite In1−x−yGaxAlyNApplied Physics Letters, 1997
- The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM CharacterizationMRS Internet Journal of Nitride Semiconductor Research, 1997
- Solid phase immiscibility in GaInNApplied Physics Letters, 1996
- Wide-gap semiconductor InGaN and InGaAln grown by MOVPEJournal of Electronic Materials, 1992
- Unstable Regions in III–V Quaternary Solid Solutions Composition Plane Calculated with Strictly Regular Solution ApproximationJapanese Journal of Applied Physics, 1982
- Calculation of ternary and quaternary III–V phase diagramsJournal of Crystal Growth, 1974
- Dielectric Definition of ElectronegativityPhysical Review Letters, 1968