Wide-gap semiconductor InGaN and InGaAln grown by MOVPE
- 1 February 1992
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 21 (2) , 157-163
- https://doi.org/10.1007/bf02655831
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxyApplied Physics Letters, 1991
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Properties of Ga1-xInxN Films Prepared by MOVPEJapanese Journal of Applied Physics, 1989
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986
- Fundamental absorption edge in GaN, InN and their alloysSolid State Communications, 1972
- Polarity of ZnO Crystal (II) Chemical Etching BehaviorJapanese Journal of Applied Physics, 1969
- Crystallographic Polarity of ZnO CrystalsJournal of Applied Physics, 1963
- THE GROWTH OF LARGE SINGLE CRYSTALS OF ZINC OXIDE1The Journal of Physical Chemistry, 1960