Electrical conductivity of heavily doped diamond

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Abstract
The semiconducting properties of boron‐, aluminum‐, and titanium‐doped diamond have been interpreted using the log R (resistance) vs 1/T curves. In boron‐doped diamond, ``high‐concentration''‐type impurity band conduction occurs. The extrinsic ranges of the curves are analyzed with the usual model to yield the activation energies of the impurity level. The activation energies for the boron‐doped samples vary from 0.15 eV for the highest dopant concentration to 0.30 eV for lower concentrations. For the aluminum‐ and titanium‐doped samples, the activation energies were found to be 0.31 and 0.40 eV, respectively. The results are consistent with those obtained from optical methods where data were available. An empirical formula is advanced which fits the log R vs dopant content rather well.