Molecular dynamics simulation of gel formation and acid diffusion in negative tone chemically amplified resists
- 1 May 1999
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 46 (1-4) , 359-363
- https://doi.org/10.1016/s0167-9317(99)00104-5
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- E-beam proximity correction for negative tone chemically amplified resists taking into account post-bake effectsMicroelectronic Engineering, 1998
- Gel formation theory approach for the modelling of negative chemically amplified e-beam resistsMicroelectronic Engineering, 1997
- Mechanism of amine additive in chemically amplified resist visualized by using Monte Carlo simulationPublished by SPIE-Intl Soc Optical Eng ,1995
- Gel Formation in Negative Electron ResistsJournal of the Electrochemical Society, 1976