E-beam proximity correction for negative tone chemically amplified resists taking into account post-bake effects
- 31 March 1998
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 41-42, 319-322
- https://doi.org/10.1016/s0167-9317(98)00073-2
Abstract
No abstract availableKeywords
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