Long wavelength GaInAs/GaAs quantum well lasers

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Abstract
We have obtained an excellent performance GaInAs/GaAs laser grown by MOCVD emitting in the long wavelength band (1@1.2 mm). The experimental critical thickness of GaInAs/GaAs quantum wells is well understood by the People and Bean model. The longest wavelength of around 1.2 mm is predicted for these structures. A 1.17 mm double quantum well laser has been demonstrated. We show that a strained buffer layer is effective for achieving good crystal quality for the active region and has no tradeoff on the device performance. For as cleaved devices a transparency current density of 180 A/cm/sup 2/ is estimated. A 900 mm long device shows a characteristic temperature as high as 150 K. Continuous wave operation is achieved for a ridge waveguide laser diode emitting at 1.2 mm.