Application of auger ewlectron depth profile analysis to thin film interdiffusion studies
- 1 March 1987
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 42 (3) , 219-226
- https://doi.org/10.1007/bf00620604
Abstract
No abstract availableKeywords
This publication has 40 references indexed in Scilit:
- SELF-DIFFUSION OF RADIOACTIVE 59Fe TRACER ATOMS IN AMORPHOUS Fe41Ni41B18Published by Elsevier ,1985
- The ultra-high resolution depth profiling reference material — Ta2O5 anodically grown on TaSurface Science, 1984
- Barrier layers: Principles and applications in microelectronicsJournal of Vacuum Science & Technology A, 1984
- The depth dependence of the depth resolution in composition–depth profiling with Auger Electron SpectroscopySurface and Interface Analysis, 1983
- Determination of the depth resolution in Auger depth profiling measurementsThin Solid Films, 1979
- Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solidsSurface and Interface Analysis, 1979
- Diffusion barriers in thin filmsThin Solid Films, 1978
- Techniques for elemental composition profiling in thin filmsC R C Critical Reviews in Solid State Sciences, 1973
- Use of Auger Electron Spectroscopy and Inert Gas Sputtering for Obtaining Chemical ProfilesJournal of Vacuum Science and Technology, 1972
- CXXXVIII. Concentration contours in grain boundary diffusionJournal of Computers in Education, 1954