Oxygen on cleaved silicon (111): Effects of atomic steps and residual gases
- 1 February 1980
- journal article
- Published by Elsevier in Surface Science
- Vol. 92 (2-3) , 407-416
- https://doi.org/10.1016/0039-6028(80)90213-7
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Structure dependent oxidation of clean Si(111) surfacesSurface Science, 1976
- Relations between electronic properties of clean surfaces and activated adsorptionSurface Science, 1975
- Binding states of water vapor on cleaved germaniumSurface Science, 1975
- The adsorption of oxygen on silicon (111) surfaces. IISurface Science, 1974
- The adsorption of water vapor on clean cleaved germanium: I. Structural and kinetic propertiesSurface Science, 1973
- The adsorption of oxygen on silicon (111) surfaces. ISurface Science, 1973
- The roughness of cleaved semiconductor surfacesSurface Science, 1973
- Adsorption of oxygen on W(100): Adsorption kinetics and electron stimulated desorptionSurface Science, 1972
- Leitfähigkeit und Feldeffekt reiner SiliziumspaltflächenPhysica Status Solidi (b), 1967