Spatially and temporally resolved absolute O-atom concentrations in etching plasmas
- 15 January 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (2) , 505-511
- https://doi.org/10.1063/1.359032
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Effects of surfaces on H-atom concentration in pulsed and continuous dischargesJournal of Vacuum Science & Technology A, 1992
- H atom plasma diagnostics: A sensitive probe of temperature and purityPlasma Chemistry and Plasma Processing, 1992
- Laser-induced fluorescence of oxygen atoms in a plasma reactorApplied Physics Letters, 1992
- Excitation mechanisms of oxygen atoms in a low pressure O2 radio-frequency plasmaJournal of Applied Physics, 1991
- Oxygen and fluorine atom kinetics in electron cyclotron resonance plasmas by time-resolved actinometryJournal of Applied Physics, 1991
- Oxygen atom actinometry reinvestigated: Comparison with absolute measurements by resonance absorption at 130 nmJournal of Applied Physics, 1991
- Spatially resolved detection of O atoms in etching plasmas by two-photon laser-induced fluorescenceJournal of Applied Physics, 1986
- Spectroscopic diagnostics of CF4-O2 plasmas during Si and SiO2 etching processesJournal of Applied Physics, 1981
- Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmasJournal of Applied Physics, 1978
- A Study of the Optical Emission from an rf Plasma during Semiconductor EtchingApplied Spectroscopy, 1977