Internal photoemission in GaAs/(AlxGa1−x)As heterostructures
- 30 November 1985
- journal article
- Published by Elsevier in Physica B+C
- Vol. 134 (1-3) , 433-438
- https://doi.org/10.1016/0378-4363(85)90384-5
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Confined carrier quantum states in ultrathin semiconductor heterostructuresPublished by Springer Nature ,2007
- Positions of the sub-band minima in GaAs(AlGa)As quantum well heterostructuresSuperlattices and Microstructures, 1985
- High mobility hole gas and valence-band offset in modulation-doped p-AlGaAs/GaAs heterojunctionsApplied Physics Letters, 1984
- Energy-gap discontinuities and effective masses for quantum wellsPhysical Review B, 1984
- Subband Structure and Landau Levels in HeterostructuresPublished by Springer Nature ,1984
- Heterostructure devices: A device physicist looks at interfacesSurface Science, 1983
- Empirical rule to predict heterojunction band discontinuitiesJournal of Applied Physics, 1983
- XPS measurement of GaAs–AlAs heterojunction band discontinuities: Growth sequence dependenceJournal of Vacuum Science and Technology, 1981
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974