High mobility hole gas and valence-band offset in modulation-doped p-AlGaAs/GaAs heterojunctions
- 15 September 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (6) , 639-641
- https://doi.org/10.1063/1.95339
Abstract
Modulation‐doped p‐AlGaAs/GaAs heterojunctions have been grown by molecular beam epitaxy. The effects of undoped AlGaAs spacer thickness on sheet carrier density and on Hall mobility have been investigated. A mobility of 97 000 cm2 V−1 s−1 has been obtained at 4.2 K for a sheet density of 1.7×1011 cm−2. This is the highest mobility reported for holes in III‐V compound semiconductors. A valence‐band offset of 210±30 meV was deduced for Al0.5Ga0.5As /GaAs heterojunctions.Keywords
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