Electron mobilities in modulation-doped GaAs-(AlGa)As heterostructures
- 2 September 1983
- journal article
- Published by Elsevier in Surface Science
- Vol. 132 (1-3) , 519-526
- https://doi.org/10.1016/0039-6028(83)90558-7
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Carrier confinement effectsSurface Science, 1983
- Influence of AlAs mole fraction on the electron mobility of (Al,Ga)As/GaAs heterostructuresJournal of Applied Physics, 1982
- Dependence of electron mobility in modulation-doped GaAs-(AlGa)As heterojunction interfaces on electron density and Al concentrationApplied Physics Letters, 1981
- Field dependence of mobility in Al 0.2 Ga 0.8 As/GaAs heterojunctions at very low fieldsElectronics Letters, 1981
- Two-dimensional electron transport in semiconductor layers. I. Phonon scatteringAnnals of Physics, 1981
- Two-dimensional hole gas at a semiconductor heterojunction interfaceApplied Physics Letters, 1980
- Impurity and phonon scattering in layered structuresApplied Physics Letters, 1979
- Two-dimensional electron gas at a semiconductor-semiconductor interfaceSolid State Communications, 1979
- Electron mobilities in modulation-doped semiconductor heterojunction superlatticesApplied Physics Letters, 1978
- Electron Mobility in High-Purity GaAsJournal of Applied Physics, 1970