Influence of dislocation density on recombination at grain boundaries in multicrystalline silicon
- 1 September 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (9) , 1687-1691
- https://doi.org/10.1088/0268-1242/8/9/001
Abstract
This paper reports a study of the causes of room-temperature recombination activity of grain boundaries in annealed multicrystalline silicon using the methods of electron-beam-induced current (EBIC) and transmission electron microscopy. It is found that the recombination activity is related to the density of dislocations in the boundary, with decoration by precipitates producing additional activity. Grain boundaries without dislocations and precipitates show only very low EBIC contrast.Keywords
This publication has 7 references indexed in Scilit:
- Annealing‐Induced Changes of Recombination in Cast Polycrystalline SiliconJournal of the Electrochemical Society, 1993
- EBIC CONTRAST OF DEFECTS IN SEMICONDUCTORSJournal de Physique IV, 1991
- Recombination properties of structurally well defined NiSi2 precipitates in siliconApplied Physics Letters, 1991
- Fast diffusers Cu and Ni as the origin of electrical activity in a silicon grain boundaryApplied Physics Letters, 1989
- Interpretation of the EBIC contrast of dislocations in siliconPhysica Status Solidi (a), 1982
- EBIC/TEM Studies on the Relation between Electrical Properties, Crystallographic Structure, and Interaction with Point Defects of Epitaxial Stacking Faults in SiliconCrystal Research and Technology, 1982
- Stabilité mécano-chimique d'un interface fluide-fluide siège de réactions mono- et bi-moléculairesJournal de Physique, 1982