Interpretation of the EBIC contrast of dislocations in silicon
- 16 March 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 70 (1) , 197-209
- https://doi.org/10.1002/pssa.2210700125
Abstract
No abstract availableKeywords
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- Electrical Activity of Epitaxial Stacking FaultsJournal of the Electrochemical Society, 1977
- Dissociation of near-screw dislocations in germanium and siliconPhilosophical Magazine, 1975