EBIC Contrast of Surface-Parallel Dislocations in a Planar Semiconductor Diode with Large Surface Recombination

This publication has 3 references indexed in Scilit:

• A contribution to the theory of the EBIC contrast of lattice defects in semiconductors
  Ultramicroscopy, 1981
• An analytical model of SEM and STEM charge collection images of dislocations in thin semiconductor layers. II. EBIC images of dislocations
  Physica Status Solidi (a), 1981
• Injected Current Carrier Transport in a Semi-Infinite Semiconductor and the Determination of Lifetimes and Surface Recombination Velocities
  Journal of Applied Physics, 1955