A contribution to the theory of the EBIC contrast of lattice defects in semiconductors
- 31 December 1981
- journal article
- Published by Elsevier in Ultramicroscopy
- Vol. 6 (1) , 237-250
- https://doi.org/10.1016/s0304-3991(81)80205-7
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Scanning Electron Microscopic Observation of Oxidation-Induced Stacking Faults in SiliconJapanese Journal of Applied Physics, 1980
- Computer simulation of SEM electron beam induced current images of dislocations and stacking faultsJournal of Applied Physics, 1980
- Observation of dislocations and microplasma sites in semiconductors by direct correlations of STEBIC, STEM and ELSJournal of Microscopy, 1980
- The electrical recombination efficiency of individual edge dislocations and stacking fault defects in n-type siliconPhysica Status Solidi (a), 1979
- Combined scanning (EBIC) and transmission electron microscopic investigations of dislocations in semiconductorsPhysica Status Solidi (a), 1979
- Contrast and resolution of SEM charge-collection images of dislocationsApplied Physics Letters, 1979
- Electrical Activity of Epitaxial Stacking FaultsJournal of the Electrochemical Society, 1977
- Theory of life time measurements with the scanning electron microscope: Steady stateSolid-State Electronics, 1976
- Electron-Beam Excited Minority-Carrier Diffusion Profiles in SemiconductorsJournal of Applied Physics, 1972
- Injected Current Carrier Transport in a Semi-Infinite Semiconductor and the Determination of Lifetimes and Surface Recombination VelocitiesJournal of Applied Physics, 1955