The electrical recombination efficiency of individual edge dislocations and stacking fault defects in n-type silicon
- 16 October 1979
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 55 (2) , 771-784
- https://doi.org/10.1002/pssa.2210550249
Abstract
No abstract availableKeywords
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