Effects of dislocations in silicon transistors with implanted bases
- 23 September 1977
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (9) , 731-740
- https://doi.org/10.1016/0038-1101(77)90001-6
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Tertiary defects in phosphorus-implanted siliconApplied Physics Letters, 1975
- Adaption of Ion Implantation for Integrated CircuitsJournal of the Electrochemical Society, 1975
- Reduced gain of ion−implanted transistorsApplied Physics Letters, 1975
- The role of radiation damage on the current-voltage characteristics of p-n junctionsSolid-State Electronics, 1974
- Electrically Active Stacking Faults in SiliconJournal of the Electrochemical Society, 1973
- Oxidation, defects and vacancy diffusion in siliconPhilosophical Magazine, 1969
- Behavior of Dislocations in Silicon Semiconductor Devices: Diffusion, ElectricalJournal of the Electrochemical Society, 1968
- Diffusion-Induced Stress and Lattice Disorders in SiliconJournal of the Electrochemical Society, 1966
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949