Tertiary defects in phosphorus-implanted silicon
- 15 October 1975
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (8) , 427-429
- https://doi.org/10.1063/1.88518
Abstract
Transmission electron microscopic observations have been made on dislocations generated in high‐dose (1×1015–3×1016 ions/cm2) phosphorus‐implanted (111) silicon wafers followed by 1100 °C isothermal annealing in inert (dry N2) and oxidizing (wet O2) atmospheres. The generation and movement of dislocations in a wafer are strongly influenced by atmospheres during annealing. In dry‐N2 annealing, the critical ion dose for generation of dislocation networks is 1×1016 ions/cm2, which is three times higher than that in wet‐O2 annealing. Also, dislocations move down to greater depths in a wafer after annealing in a wet‐O2 atmosphere, while in dry‐N2 annealing their location in a wafer is usually unchanged.Keywords
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