Radiation disorder and lattice location in ion implanted aluminium crystals

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Abstract
Aluminium single crystals have been implanted with S, Ca, Cu, Ga, Ge and Cs ions with energies corresponding to similar projected ranges. Energy dependent channelling and Rutherford backscattering experiments have been performed in the energy range of 1–3 MeV using 4He+ ions as the analyzing particles. The aligned spectra of Cu, Ga, Ge and Cs implanted samples showed a monotonous increment of the dechannelling yields with depths and no disorder peaks have been observed. The dechannelling yields determined from these spectra revealed a √E dependence with a relatively higher slope for the Cs implanted sample compared to the others. The Ge implanted sample showed very little dependence on √E. However, the spectra of the S and Ca implanted samples showed disorder peaks within approximately the measured projected range as the energy of the analyzing beam was increased. The lattice positions of these ions in Al are also reported. S, Ca, Cs and Ge showed no or little substitutional occupation, however, Cu and Ga showed high (> 70%) substitutionality but the atoms were displaced some tenths of an angstrom from the ideal lattice site.