Preparation and characterization of thin films of MgO, Al2O3 and MgAl2O4 by atomic layer deposition
- 1 February 1993
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 22 (2) , 215-220
- https://doi.org/10.1007/bf02665029
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Preparation and characterization of MgO thin films deposited by spray pyrolysis of Mg(2,4-pentanedionate)2Journal of Crystal Growth, 1991
- Growth of epitaxial PrO2 thin films on hydrogen terminated Si (111) by pulsed laser depositionJournal of Applied Physics, 1990
- Epitaxial yttria-stabilized zirconia on hydrogen-terminated Si by pulsed laser depositionApplied Physics Letters, 1990
- Epitaxial growth of CeO2 layers on siliconApplied Physics Letters, 1990
- Effects of Various Atmospheres on the Reduced‐Pressure CVD of Al2 O 3 Thin Films at Low TemperaturesJournal of the Electrochemical Society, 1989
- Heteroepitaxial Si/Al2O3/Si structuresApplied Physics Letters, 1989
- Heteroepitaxial growth of Y2O3 films on siliconApplied Physics Letters, 1989
- Al2O3 deposited by the oxidation of trimethylaluminum as gate insulators in hydrogen sensorsJournal of Electronic Materials, 1987
- Chemical Vapor Deposition of Al2 O 3 Thin Films under Reduced PressuresJournal of the Electrochemical Society, 1985
- Deposition and Properties of Aluminum Oxide Obtained by Pyrolytic Decomposition of an Aluminum AlkoxideJournal of the Electrochemical Society, 1967