Abstract
The lithium interstitial model (antimorph of the H center) for the defect associated with the 5430-Å absorption band formed in LiF by electron or neutron irradiation at 77°K is strongly supported by new experimental results: The creation rate of these defects is proportional to the incident electron flux, is independent of the F-center creation rate, and increases with the thickness of the sample, in good agreement with a knock-on process.