Vertical integration of a GaAs/AlGaAs quantum-welllaser and along-wavelength quantum-well infra-red photodetector
- 3 March 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (5) , 450-451
- https://doi.org/10.1049/el:19940295
Abstract
A short-wavelength (~0.8 µm) GaAs/AlGaAs graded-index separate-confinement heterostructure quantum-well laser has been monolithically integrated with a long-wavelength (~8 µm) GaAs/AlGaAs multiquantum-well infra-red photodetector on a semi-insulating GaAs substrate by molecular beam epitaxy. The vertical integration method is used and the combined structure is a pinin structure. Both the laser and detector exhibit excellent characteristics. At room temperature, the ridge waveguide laser has an extremely low threshold current of 25 mA and a differential quantum efficiency above 65% with a stripe width of 20 µm. The quantum-well detector has a peak response at 8 µm and a responsivity of 0.7 A/W.Keywords
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