Vertical integration of an In 0.15 Ga 0.85 As modulation-doped field effect transistor and GaAs laser grown by molecular beam epitaxy
- 15 March 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (6) , 350-352
- https://doi.org/10.1049/el:19900228
Abstract
A vertically integrated structure consisting of an In0.15Ga0.85As pseudomorphic modulation doped field effect transistor (MODFET) and a GaAs graded index separate confinement heterostructure single quantum well (GRINSCH SQW) laser was grown by molecular beam epitaxy. Wafers containing integrated MODFET/laser layers produced MODFETs with DC and microwave performance comparable to wafers containing only MODFET layers, indicating that the modulation doping and the strained In0.15Ga0.85As channel were largely unaffected by the long, high temperature laser growth. The lasers had threshold currents similar to identical structures grown on n-type substrates and the integrated structures had a – 3dB modulation bandwidth of 3.5 GHz.Keywords
This publication has 1 reference indexed in Scilit:
- Design, fabrication, and characterization of ultra high speed AlGaAs/InGaAs MODFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003