Chemical routes to GaAs etching with low-energy ion beams
- 1 November 1991
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 3 (S) , S179-S186
- https://doi.org/10.1088/0953-8984/3/s/029
Abstract
The interaction of halogens on GaAs surfaces lies at the heart of a whole host of dry-etching methods. This paper considers the adsorption characteristics of chlorine on GaAs(100)(4*1) and the effect of low-energy ion bombardment on the chemisorbed states formed. The results are discussed in relation to ultra-low damage and low contamination chemically assisted ion beam etching (CAIBE) processes.Keywords
This publication has 8 references indexed in Scilit:
- Surface studies of the interaction of Cl2 with InP(100)(4 × 2); an investigation of adsorption, thermal etching and ion beam assisted processesSurface Science, 1990
- Roughness induced at Si(111) surfaces by high temperature heatingApplied Surface Science, 1990
- Low energy chlorine-ion interaction on GaAs(001)Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Interplay between computer simulation and transport theory in the analysis of ion-beam-induced collision processes in solidsJournal of Vacuum Science & Technology A, 1989
- A critical discussion of emission mechanisms and reaction rates for the ion-assisted etching of GaAs(100)Journal of Applied Physics, 1988
- Modulated ion beam studies of product formation and ejection in ion-induced etching of GaAs by Cl2Journal of Applied Physics, 1988
- The thermal and ion-assisted reactions of GaAs(100) with molecular chlorineJournal of Vacuum Science & Technology B, 1986
- Investigation of the kinetic mechanism for the ion-assisted etching of GaAs in Cl2 using a modulated ion beamJournal of Applied Physics, 1985