Type-B epitaxial growth of CeO2 thin film on Si(111) substrate
- 1 September 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 123 (1-2) , 1-4
- https://doi.org/10.1016/0022-0248(92)90004-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Growth of epitaxial PrO2 thin films on hydrogen terminated Si (111) by pulsed laser depositionJournal of Applied Physics, 1990
- In Situ RHEED Observation of CeO2 Film Growth on Si by Laser Ablation Deposition in Ultrahigh-VacuumJapanese Journal of Applied Physics, 1990
- Epitaxial growth of CeO2 layers on siliconApplied Physics Letters, 1990
- Growth Mechanism of Epitaxial Oxide Films by Laser MBEMRS Proceedings, 1990
- Heteroepitaxial growth of Y2O3 films on siliconApplied Physics Letters, 1989