Chromium and nickel ion irradiation effects on the low- and high-temperature metal-semiconductor transitions in (V1−xCrx)2O3 ceramics

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Abstract
Chromium doped vanadium sesquioxide [(V1−xCrx)2O3] ceramic samples have been irradiated using medium energy chromium and nickel ions (52Cr:572 MeV, 64Ni:640 MeV) at various fluences (4×1011–1.1×1014 ions/cm2) and doping rates (x=0.3, 0.6, and 0.7). Irradiation has been carried out under vacuum and at room temperature. Irradiated samples have been characterized by electrical resistivity measurements as a function of temperature for the low‐ and the high‐temperature transitions in the (V1−xCrx)2O3 system. Irradiation by chromium and nickel ions creates bilayered samples as the ions mean projected range were smaller than the sample thickness. The bilayer structure is characterized by two transitions at low temperature. Dealing with the high temperature positive temperature coefficient transition, the negative temperature coefficient behavior above this transition has been considerably attenuated due to the bilayered structure. In situ measurements on an irradiated sample have shown that after annealing the electrical characteristics for the low‐ and the high‐temperature transitions tend to be close to those of an unirradiated sample. However, even an annealing at 380 °C does not eliminate all the irradiation effects.

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