Reduction reaction of native oxide at the initial stage of GeH4 chemical vapor deposition on (100) Si
- 6 August 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (6) , 599-601
- https://doi.org/10.1063/1.104248
Abstract
The existence of offset time t0 for the Ge deposition is found at the initial stage of Ge epitaxial growth on the Si(100) surface. The t0 is measured for various GeH4 pressures and Si surface conditions. From this investigation, it was determined that the t0 corresponded to the period for the reduction reaction of surface native Si oxide. It was concluded that the two surface SixO molecules were reduced by one GeH4 molecule.Keywords
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