Selective Ge deposition on Si using thermal decomposition of GeH4
- 15 October 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (8) , 863-865
- https://doi.org/10.1063/1.96011
Abstract
Deposition characteristics of Ge using thermal decomposition of GeH4 are studied. The deposition rate of Ge in a surface reaction region at temperatures below 410 °C is formulated as a function of the deposition temperature and GeH4 partial pressure. Selective deposition of Ge occurs reproducibly in the lower temperature range below 410 °C. The cause of the suppression of selectivity and epitaxial growth at deposition temperatures above 450 °C is confirmed as oxide contamination on the substrate.Keywords
This publication has 4 references indexed in Scilit:
- Investigation of crystallographic properties of thin germanium crystals grown on silicon substrates by chemical vapor depositionThin Solid Films, 1983
- The heteroepitaxy of Ge on Si: A comparison of chemical vapor and vacuum deposited layersJournal of Applied Physics, 1982
- Epitaxial growth of Ge on 〈100〉 Si by a simple chemical vapor deposition techniqueApplied Physics Letters, 1981
- Selective epitaxy using silane and germaneJournal of Crystal Growth, 1971