Lasing Transitions in p+-n-n+ (AlGa) As–Ga As Heterojunction Lasers
- 15 February 1972
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 20 (4) , 175-177
- https://doi.org/10.1063/1.1654098
Abstract
A study of the lasing and spontaneous emission from p+‐n‐n+ heterojunction lasers with lightly doped n‐type active regions shows that the stimulated emission is not due to a simple band‐to‐band recombination process. It is further shown that the 300 K gain coefficient dependence on the junction current differs greatly from that predicted on the basis of band‐to‐band lasing involving a parabolic density‐of‐states distribution.Keywords
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