Heteroepitaxial growth of InN by microwave-excited metalorganic vapor phase epitaxy
- 20 February 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (8) , 709-711
- https://doi.org/10.1063/1.100870
Abstract
Epitaxial layers of InN films were grown onto (0001) α‐Al2O3 substrates in the temperature range of 400–600 °C by microwave‐excited metalorganic vapor phase epitaxy using (CH3)3In and N2. Specular surface was obtained at a low substrate temperature (100 W). From reflection high‐energy electron diffraction analysis, the deposited films were found to be crystalline InN with an orientation relation of (0001) InN//(0001) α‐Al2O3. The stoichiometry of the grown films was found to be similar to that reported for bulk InN from electron spectroscopy for chemical analysis.Keywords
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