Diffusion of Zinc into GaAs

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Abstract
Experimental studies have been made of the zinc diffusion into GaAs Crystals containing dislocations of 0 to 108 cm-2 at various arsenic vapor pressures. The diffused layers were observed by means of chemical etching and an infrared microscope. For the diffusion without arsenic, (1) the fast diffusion takes place in the presence of dislocations, and (2) a large number of dislocations, proportional to the square of the zinc concentration, are induced in the diffused layers. For the diffusion under high arsenic vapor pressure, (3) generation of new dislocations is suppressed in the shallow diffusion layers, while in layer deeper than 40∼60 µ the dislocation density is suddenly increased, accompanied by fast diffusion, thereby resulting doubly stepped diffusion front, (4) the rate of the ordinary substitutional diffusion is comparatively lowered, and (5) the existence of ZnAs2 is detected in the diffused layer. The observed fast diffusion along the dislocations is qualitatively interpreted in terms of an induced dislocation model.

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