In Ga N ∕ Ga N single-quantum-well light-emitting diodes optical output efficiency dependence on the properties of the barrier layer separating the active and p-layer regions
- 21 June 2004
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 84 (25) , 5252-5254
- https://doi.org/10.1063/1.1765743
Abstract
We have examined the output optical efficiency dependence of In Ga N ∕ Ga N single-quantum-well (SQW)structures on the properties of the barrier layer separating the active and p -layer regions in typical metalorganic chemical vapor deposition grown light-emitting-diode (LED) devices. Based on room-temperature electroluminescence and 10 – 300 K photoluminescence findings, the optical output of SQWLEDs was found to be extremely sensitive to narrow range variations in thickness, growth temperature, and surface roughness of the uppermost barrier layer in such devices. Applying these principles and observations, a thermally robust 465 nm SQWLED with an unpackaged chip-level output power in the 5.0 – 6.0 mW range and forward voltage < 3.2 V at 20 mA has been achieved.Keywords
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