Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime
- 1 October 1998
- journal article
- Published by Elsevier in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 3 (1-3) , 1-7
- https://doi.org/10.1016/s1386-9477(98)00211-2
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Ultrahigh vacuum–scanning tunneling microscopy nanofabrication and hydrogen/deuterium desorption from silicon surfaces: implications for complementary metal oxide semiconductor technologyApplied Surface Science, 1998
- Cryogenic UHV-STM Study of Hydrogen and Deuterium Desorption from Si(100)Physical Review Letters, 1998
- Comment on ‘‘Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing’’ [Appl. Phys. Lett. 68, 2526 (1996)]Applied Physics Letters, 1996
- Atomic-Scale Desorption Through Electronic and Vibrational Excitation MechanismsScience, 1995
- A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport siliconIEEE Transactions on Electron Devices, 1994
- Energies of various configurations of hydrogen in siliconPhysical Review B, 1994
- Design tradeoffs between surface and buried-channel FET'sIEEE Transactions on Electron Devices, 1985
- Disorder of an AlAs-GaAs superlattice by impurity diffusionApplied Physics Letters, 1981