A 1.3 µm InGaAsP/InP Multiquantum Well Laser Grown by LPE
- 1 February 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (2A) , L137-139
- https://doi.org/10.1143/jjap.24.l137
Abstract
We have successfully achieved a 1.3 µm InGaAsP/InP BH laser with multiquantum well active layers grown by low-temperature LPE technique (T g =589°C). The thickness of thin epitaxial layers was less than de Broglie wavelength. The laser has a threshold current of 19 mA, an external differential quantum efficiency of ∼40%, and T 0 value of ∼145 K in the range from -5°C to 20°C and ∼60 K from 20°C to 70°C.Keywords
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