Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasers
- 1 August 1980
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (8) , 4539-4540
- https://doi.org/10.1063/1.328396
Abstract
InGaAsP/InP buried‐heterostructure lasers with a stripe width of 1–2 μm have been fabricated by two‐step liquid phase epitaxy and preferential chemical etching. They operate in the fundamental transverse mode at wavelengths of ∼1.3 μm with threshold current as low as 22 mA. The temperature limit for cw operation is 80 °C.This publication has 6 references indexed in Scilit:
- Low-threshold 1.25-μm vapor-grown InGaAsP cw lasersApplied Physics Letters, 1979
- Buried Stripe GaInAsP/InP DH Laser Prepared by Using Meltback MethodJapanese Journal of Applied Physics, 1978
- In1-xGaxAsyP1-y/InP DH lasers fabricated on InPIEEE Journal of Quantum Electronics, 1978
- Room-temperature cw operation of buried-stripe double-heterostructure GaInAsP/InP diode lasersApplied Physics Letters, 1977
- 1500-h continuous cw operation of double-heterostructure GaInAsP/InP lasersApplied Physics Letters, 1977
- Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ mApplied Physics Letters, 1976