Subband structure ofn-type accumulation and inversion layers in GaAs-Ge heterojunctions
- 15 July 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 32 (2) , 980-985
- https://doi.org/10.1103/physrevb.32.980
Abstract
The density-functional method is used to calculate subband energies and densities for electrons in accumulation and inversion layers in GaAs-Ge heterojunctions. We investigate the (100), (110), and (111) orientations of the Ge surface and present our results as a function of dopant concentrations in the bulk semiconductors.Keywords
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