Relaxation of thermal strain in GaN epitaxial layers grown on sapphire
- 31 January 1997
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 43 (1-3) , 250-252
- https://doi.org/10.1016/s0921-5107(96)01877-6
Abstract
No abstract availableKeywords
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