Study of Low-Temperature Oxidation in Au/Si and Cu/Si Systems by 7-MeV Alpha Particle Backscattering Analysis
- 1 March 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (3A) , L210
- https://doi.org/10.1143/jjap.31.l210
Abstract
Low-temperature oxidation kinetics in the Au/Si and Cu/Si systems was measured by a 7-MeV alpha backscattering technique. The formation of a Si oxide layer near the surface in the Au/Si system is mainly controlled by intermixing between the Au and Si substrates. The formation of thick SiO2 in the Cu-Si interface at room temperature is a catalytic process due to the presence of a Cu3Si compound.Keywords
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