Unusual room-temperature intermixing and oxidation in copper deposited on a fluorinated amorphous silicon system
- 18 January 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (3) , 191-193
- https://doi.org/10.1063/1.99516
Abstract
The room‐temperature behavior of Cu thin films on crystalline and amorphous silicon (c‐Si and a‐Si) substrates was studied by Auger electron spectroscopy. All samples, except Cu/ a‐Si:F, behaved as usual metal on silicon systems. It was found that F greatly enhances Cu‐Si intermixing which proceeds up to the sample surface. After prolonged room‐temperature exposure to air, this system settles into the unusual configuration: Cu/SiO2/a‐Si:F. The effect is explained in terms of the permeability of Cu3Si to oxygen and the low solubility of Cu in SiO2.Keywords
This publication has 22 references indexed in Scilit:
- Reactions between Ti and Al films on a-Si:HMaterials Letters, 1986
- Atomic Migration of Metals in the Interfaces of Au-Si and Ni-Si for Crystalline and Amorphous Si Observed by 40 MeV-O5+ Ion BackscatteringJapanese Journal of Applied Physics, 1985
- Mechanism of growth of ultrathin SiO2 layers on silicide substratesSurface Science, 1985
- AES study of room temperature oxygen interaction with near noble metal-silicon compound surfacesSurface Science, 1985
- Electronic properties on silicon-transition metal interface compoundsSurface Science Reports, 1985
- Properties of fluorinated glow-discharge amorphous siliconPhysical Review B, 1985
- Surface compositions of copper-silicon alloysApplications of Surface Science, 1983
- Interfacial reactions between Au and hydrogenated amorphous SiJournal of Vacuum Science and Technology, 1982
- Structure and growth of the interface of Pd on:Physical Review B, 1981
- The infrared spectroscopic study of metals intruded into a silica frameworkSpectrochimica Acta Part A: Molecular Spectroscopy, 1972