Structure and growth of the interface of Pd on:
- 15 June 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 23 (12) , 6828-6831
- https://doi.org/10.1103/physrevb.23.6828
Abstract
The structure of the — : interface is probed using interference-enhanced Raman scattering. It was found that ∼ 2 nm of Pd was initially consumed to form a crystalline silicide at the — : interface. Annealing to 300°C caused a spectroscopic change, which is associated with a structural change, and additional annealing at 500°C caused the formation of crystalline Si.
Keywords
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