Trends in ferromagnetism, hole localization, and acceptor level depth for Mn substitution in

Preprint

12 September 2004

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0409296

Abstract

We examine the intrinsic mechanism of ferromagnetism in dilute magnetic semiconductors by analyzing the trends in the electronic structure as the host is changed from GaN to GaP, GaAs and GaSb, keeping the transition metal impurity fixed. In contrast with earlier interpretations which depended on the host semiconductor, we found that a single mechanism is sufficient to explain the ferromagnetic stabilization energy for the entire series.

Keywords

ACCEPTOR LEVEL
ELECTRONIC STRUCTURE
FERROMAGNETISM
GAAS
GAN
HOLE LOCALIZATION
LEVEL DEPTH
MN SUBSTITUTION
SEMICONDUCTOR
TRANSITION METAL

All Related Versions

Version 1, 2004-09-12, ArXiv
Published version: Applied Physics Letters, 85 (14), 2860.

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