Trends in ferromagnetism, hole localization, and acceptor level depth for Mn substitution in GaN, GaP, GaAs, and GaSb
- 4 October 2004
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 85 (14) , 2860-2862
- https://doi.org/10.1063/1.1799245
Abstract
We examine the intrinsic mechanism of ferromagnetism in dilute magnetic semiconductors by analyzing the trends in the electronic structure as the host is changed from GaN to GaSb , keeping the transition metal impurity fixed. In contrast with earlier interpretations which depended on the host semiconductor, it is found that a single mechanism is sufficient to explain the ferromagnetic stabilization energy for the entire series.Keywords
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