Reactive Ion Etching of Sputtered PbZr1-xTixO3 Thin Films
- 1 September 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (9A) , L1260
- https://doi.org/10.1143/jjap.31.l1260
Abstract
Reactive ion etching (RIE) by CCl4 plasma of sputtered PbZr1-x Ti x O3 (PZT) thin film has been investigated. The etching rate of the as-deposited pyrochlore phase PZT is comparable to that of perovskite which was crystallized by 600°C annealing. Etching rate increased with increasing RF power and reached a plateau at 1.0 W/cm2. Highly anisotropic etching of PZT with little resist damage could be realized by reducing RF power.Keywords
This publication has 4 references indexed in Scilit:
- Effects of Excited Species in Electron Cyclotron Resonance Plasma on SiN Film ResistivityJapanese Journal of Applied Physics, 1992
- An experimental 512-bit nonvolatile memory with ferroelectric storage cellIEEE Journal of Solid-State Circuits, 1988
- Characteristics of domain in tetragonal phase PZT ceramicsFerroelectrics, 1987
- Excimer-laser-induced etching of ceramic PbTi1−xZrxO3Journal of Applied Physics, 1987