High current ECR source for oxygen implantation: Life tests and comparison to duopigatron performance

1 January 1990

journal article
research article
Published by AIP Publishing in Review of Scientific Instruments

Vol. 61 (1) , 294-296
https://doi.org/10.1063/1.1141326

Abstract

An ECR source has been built for production use on Eaton’s NV200 oxygen implanter. It can be retrofitted in place of the duopigatron normally used on that machine. This article reports results of 200 continuous hours of operation of the source, producing 95 mA of O⁺ ions, on a special test stand which emulates the injector of the NV200. Currents up to 200 mA at 45 kV were briefly obtained on this stand, the upper limit being set by thermal capacity of the beam dump. The ECR source was installed on an NV200 and used to implant wafers at 200 keV. Its performance is compared to that of the duopigatron source under similar conditions.

Keywords

This publication has 1 reference indexed in Scilit:

Very high current ECR ion source for an oxygen ion implanter
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987