Millimeter-wave noise parameters of high-performance HEMTs at 300 K and 17 K

Publisher Website

13 January 2003

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/mwsym.1989.38847

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

Ultra-low-noise cryogenic high-electron-mobility transistors
IEEE Transactions on Electron Devices, 1988
Determination of Microwave Two-Port Noise Parameters Through Computer-Aided Frequency-Conversion Techniques
IEEE Transactions on Microwave Theory and Techniques, 1979