TUNNELING IN METAL-GLASS-SILICON STRUCTURES
- 1 October 1968
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 13 (7) , 221-222
- https://doi.org/10.1063/1.1652579
Abstract
Low‐temperature conductance peaks have been observed in tunneling measurements on aluminum‐phosphosilicate glass‐degenerate silicon sandwich structures. In magnetic fields up to 84 kOe these peaks split and, with certain assumptions, the g value for the impurity responsible for the peak is found to be 2.1 ± 0.1.Keywords
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